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液氮制冷型红外探测器(一)

  • 产品型号:KV104
  • 产品时间:2016-04-24
  • 简要描述:液氮制冷型红外探测器(IR Detectors with Dewar) ---KOLMAR TECHNOLOGIES
    ■ KV104 Series HgCdTe Photodiodes
  • 产品简介

 

液氮制冷型红外探测器(IR Detectors with Dewar) ---KOLMAR TECHNOLOGIES
■ KV104 Series HgCdTe Photodiodes 

◆ High D* at high frequencies
◆ Sizes 2.0 mm to 0.05 mm
◆ Wavelength cutoff: 11.5, 8, 4.5 μm
◆ Linear
◆ Custom configurations available
 

 

Model*
Wavelength (µm)
Peak/ Cutoff
Size(mm)
Bandwidth(Hz) 
D*(60FOV)
(Jones,typ)
Responsivity
(Amps/Watt)
KV104-1-A-3/11
10.5 />11.5
1 x 1
>20M
3.00E+10
>4
KV104-1-A-3/12
11 />12.3
1 x 1
>20M
3.00E+10
>4
KV104-1-A-3/10
9/ >10
1 x 1
>20M
5.00E+10
>4
KV104-0.5-A-3/11
10.5/ >11.5
0.5 x 0.5
>50M
3.00E+10
>4
KV104-0.25-A-1/11
10.5/ >11.5
0.25x0.25
>100M
3.00E+10
>4
KV104-0.1-1-E/11
10.5 />11.5
0.1 x 0.1
>500M
3.00E+10
>4
KV104-0.5-A-2/8
7.2 />8
0.5 x 0.5
>30M
7.00E+10
>3
KV104-1-A-7/11/TS
10.5 />11.5
1 x 1
>20M
3.00E+10
>4
KV104-1-A-5/11/TS
10.5 />11.5
1 x 1
>20M
3.00E+10
>4

■ KLD Series Linear Response MCT Detectors 

◆Linear responsivity
◆High D*
◆Sizes 2.0 mm to 0.5 mm
◆Integral amplifier for optimum linearization
◆Spectral range 2 m m to 12 m m
◆Amplifiers matched for power range
◆Custom configurations available
 

 

Model *
Wavelength (μm)
Peak / Cutoff
Size(mm dia.)
Bandwidth(Hz) 
D*(60FOV)
(Jones,typ) 
Responsivity
(Volts/mWatt)
KLD-1-J1-3/11
10.5 / 11.5
1
2M
4.00E+10
>40
KLD-1-J1-3/9
7.6 / 8.5
1
2M
6.00E+10
>32
KLD-0.5-J1-3/10/DC
9 /10
0.5x0.5
DC - 5M
8.00E+10
>40
KLD-0.5-J1-3/11/DC
10 / 11.5
0.5x0.5
DC - 5M
4.00E+10
>40
KLD-2-J1-3/11/DC
10.5 / 11.5
2
DC - 1M
4.00E+10
>40


■ MCT Photodiodes with Integral Amplifiers

◆High D* at high frequencies
◆Bandwidth to 100 MHz
◆Fast risetime: 3.5 ns
◆Sizes 2.0 mm to 0.1 mm
◆Wavelength cutoff: 11.5, 8, 4.5 μm
◆Linear
◆Custom configurations available
 

 

Model *
Wavelength (μm )
Peak / Cutoff
Size
(mm dia.)
Bandwidth
 (Hz)AC DC
D*(60FOV)
(Jones,typ)
Responsivity
(Volts/mWatt)
KMPV11-1-J1/AC
10.5 /> 11.5
1
100-20M
3.00E+10
>40
KMPV11-1-J1/DC
10.5/ > 11.5
1
DC - 20M
3.00E+10
>40
KMPV11-1-J2
10.5/ > 11.5
1
100-20M DC - 20M
3.00E+10
>40DC + 80AC
KMPV8-0.5-J2/50
  7.2 / >8
0.5 x 0.5
100-50M DC - 50M
6.00E+10
>16DC + 32AC
KMPV8-0.5-J1/DC50
  7.2 / >8
0.5 x 0.5
DC - 50M
6.00E+10
>16
KMPV11-0.5-J1/DC
10.5 / >11.5
0.5 x 0.5
DC - 20M
3.00E+10
>40
KMPV8-0.5-J1/DC
  7.2  / >8
0.5 x 0.5
DC - 20M
6.00E+10
>40
KMPV11-0.1-J1/DC100
   10.1  / >11
0.1 x 0.1
DC - 100M
2.00E+10
>16


■ Series KISD InSb Photodiodes
◆With or without integral low noise amplifiers
◆Fast rise times: 25 ns, 7 ns
◆Linear response with power
◆High detectivity
◆Custom configurations available

Model*
Size
(mm dia.)
Bandwidth
 (Hz)AC DC
D*(60FOV)
(Jones, typ)
Responsivity
nominal  
KISD-1-A-6
1
 
1.50E+11
3 A/W
KISD -2-A-6
2
 
1.50E+11
3 A/W
KISD-0.5-A-6
0.5
 
1.50E+11
3 A/W
KISDP-1-J1/AC
1
100-15M
1.50E+11
3 x 104 V/W
KISDP-1-J1/DC
1
   15M
1.50E+11
3 x 104 V/W
KISDP-1-J2
1
100-15M ,   15M
1.50E+11
3 x 104 V/W
KISDP-1-J2/E5
1
100-1.5M ,  1.5M
1.50E+11
3 x 105 V/W
KISDP-1-J2/E6
1
100-200k, 200k
1.50E+11
3 x 106 V/W
KISDP-1-J1/E6
1
 200k
1.50E+11
3 x 106 V/W

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